AO8822 v ds i d (at v gs =10v) 7a r ds(on) (at v gs =10v) < 18m w r ds(on) (at v gs = 4.5v) < 22m w r ds(on) (at v gs = 3.6v) < 23m w r ds(on) (at v gs = 2.5v) < 27m w esd protected symbol v ds v gs i dm t j , t stg symbol t 10s steady-state steady-state r q jl w 1.5 maximum junction-to-lead c/w c/w maximum junction-to-ambient a d 64 130 83 maximum junction-to-ambient a t a =25c t a =70c power dissipation b p d pulsed drain current c continuous drain current t a =25c a i d 7 6 30 the AO8822 uses advanced trench technology to provi de excellent r ds(on) , low gate charge and operation with gate voltages as low as 1.8v while retaining a 12v v gs(max) rating. this device is suitable for use as a uni-di rectional or bi-directional load switch, facilitated by its c ommon- drain configuration. v maximum units parameter absolute maximum ratings t a =25c unless otherwise noted 20v v 12 gate-source voltage drain-source voltage 20 c/w r q ja 63 101 83 c thermal characteristics units parameter typ max 1 t a =70c junction and storage temperature range -55 to 150 g s g d s d g1 s1 s1 d1/d2 g2 s2 s2 d1/d2 1 2 3 4 8 7 6 5 20v common-drain dual n-channel mosfet general description features www.freescale.net.cn 1 / 5
symbol min typ max units bv dss 20 v v ds =20v, v gs =0v 1 t j =55c 5 i gss 10 m a bv gso 12 v v gs(th) gate threshold voltage 0.5 0.8 1 v i d(on) 30 a 13 15 18 t j =125c 22 27 15 17 22 m w 16 18 23 m w 18 21 27 m w 28 m w g fs 31 s v sd 0.7 1 v i s 2 a c iss 520 650 780 pf c oss 140 pf c rss 60 pf q g (10v) 12 15 18 nc q g (4.5v) 5 6.7 8 nc q gs 3.6 nc q gd 3 nc t d(on) 0.25 us t r 0.45 us t d(off) 11 us t f 4 us t rr 8 10 12 ns q rr 8 11 13.5 nc body diode reverse recovery time drain-source breakdown voltage on state drain current i d =250 m a, v gs =0v v gs =10v, v ds =5v v gs =10v, i d =7a reverse transfer capacitance i f =7a, di/dt=500a/ m s v gs =0v, v ds =10v, f=1mhz switching parameters electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss m a v ds =v gs i d =250 m a v ds =0v, v gs = 10v zero gate voltage drain current gate-body leakage current gate-source breakdown voltage v ds =0v, i g =250 m a forward transconductance diode forward voltage r ds(on) static drain-source on-resistance m w i s =1a,v gs =0v v ds =5v, i d =7a v gs =1.8v, i d =2a v gs =4.5v, i d =6.6a v gs =3.6v, i d =6a v gs =2.5v, i d =5.5a turn-off fall time total gate charge v gs =10v, v ds =10v, i d =7a gate source charge gate drain charge total gate charge body diode reverse recovery charge i f =7a, di/dt=500a/ m s maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters turn-on rise time turn-off delaytime v gs =10v, v ds =10v, r l =1.5 w , r gen =3 w a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air enviro nment with t a =25c. the value in any given application depends on the user' s specific board design. b. the power dissipation p d is based on t j(max) =150c, using 10s junction-to-ambient thermal resistance. c. repetitive rating, pulse width limited by junct ion temperature t j(max) =150c. ratings are based on low frequency and duty cycles to keep initialt j =25c. d. the r q ja is the sum of the thermal impedence from junction to lead r q jl and lead to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-ambien t thermal impedence which is measured with the devi ce mounted on 1in 2 fr-4 board with 2oz. copper, assuming a maximum junction temperatur e of t j(max) =150c. the soa curve provides a single pulse ratin g. AO8822 20v common-drain dual n-channel mosfet www.freescale.net.cn 2 / 5
typical electrical and thermal characteristics 17 5 2 10 0 18 40 0 5 10 15 20 0 0.5 1 1.5 2 2.5 3 v gs (volts) figure 2: transfer characteristics (note e) i d (a) 10 15 20 25 30 35 40 0 5 10 15 20 i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) r ds(on) (m w w w w ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v sd (volts) figure 6: body-diode characteristics (note e) i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature (note e) normalized on-resistance v gs =2.5v i d =5.5a v gs =10v i d =7a 10 20 30 40 50 60 0 2 4 6 8 10 v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) r ds(on) (m w w w w ) 25c 125c v ds =5v v gs =4.5v v gs =10v i d =7a 25c 125c 0 10 20 30 40 0 1 2 3 4 5 v ds (volts) fig 1: on-region characteristics (note e) i d (a) v gs =2v 10v 3v 4v v gs =2.5v v gs =3.6v v gs =1.8v v gs =3.6v i d =6a v gs =1.8v i d =2a v gs =4.5v i d =6.6a AO8822 20v common-drain dual n-channel mosfet www.freescale.net.cn 3 / 5
typical electrical and thermal characteristics 0 2 4 6 8 10 0 4 8 12 16 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 200 400 600 800 1000 0 4 8 12 16 20 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss c oss c rss v ds =10v i d =7a 0 10 20 30 40 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note f) power (w) t a =25c 0.0 0.1 1.0 10.0 100.0 0.01 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note f) 10 m s 10s 1ms dc r ds(on) limited t j(max) =150c t a =25c 100 m s 10ms 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal imp edance (note f) z q q q q ja normalized transient thermal resistance single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse r q ja =83c/w AO8822 20v common-drain dual n-channel mosfet www.freescale.net.cn 4 / 5
- + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform ig v gs - + vd c d u t l v gs v ds isd isd d iode r ecovery t est c ircuit & w aveform s v ds - v ds + i f di/dt i r m rr v dd v dd q = - idt t rr - + v d c d u t v d d v g s v ds v g s r l r g v gs v d s 1 0% 90 % r es istiv e s w itch ing t e st c ircu it & w a ve fo rm s t t r d (o n ) t o n t d (o ff) t f t o ff AO8822 20v common-drain dual n-channel mosfet www.freescale.net.cn 5 / 5
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